国家/地区 日本（42）
IPC部 C（42）
IPC大类 C01（42） C30（42） C23（26）
H01（20） B82（13） B32（12）
B01（6） B05（3） C22（3）
B21（2） C25（2） H05（2）
IPC小类 C01B（42）
IPC C30B029/02（42）
发明人 AIDA H（4） AOTA N（4） VEERASAMY V（3）
VEERASAMY V S（3） CHIBA Y（2） CHIBA YOSHIHIRO（2）
KIM J（2） MANCEVSKI V（2） VLADIMIR M（2）
公开年 2011（7） 2014（5） 2017（5） 2013（4） 2015（4） 2021（4） 2022（3） 2009（2） 2010（2） 2012（2）
申请年 2012（6）  2009（5）  2016（5）  2020（4）  2010（3）  2011（3）  2013（3）  2014（3）  2008（2）  2015（2）  2021（2）  2022（2） 
专利权人 NAMIKI SEIMI.（5） DOKURITSU GY.（3） GUARDIAN GLA.（3） GUARDIAN IND（3）
GUARDIAN IND.（3） FUJITSU LTD（2） JX NIPPON MI.（2） MAX PLANCK G.（2）
NAT INST ADV.（2） NIPPON MININ.（2） UNIV NAGOYA（2） UNIVERSAL MA.（2）

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Method for producing graphene junction composed of collection of graphene, involves evenly compressing plane above graphene cluster, and generating frictional heat at portion where flat planes of graphene overlap each other.

KOBAYASHI H

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J