国家/地区 世界知识产权组织（40）
IPC部 B（40）
IPC大类 C01（40） C30（40） B82（28）
C23（19） H01（19） B32（13）
B01（9） B05（5） C09（3）
B21（2） C03（2） C10（2）
C25（2）
IPC小类 C01B（40）
IPC C30B029/02（40）
发明人 VEERASAMY V（3） VEERASAMY V S（3） DING G（2）
JANG B Z（2） LIU X（2） MANCEVSKI V（2）
TOH C T（2） WANG H（2） XIE X（2）
公开年 2011（6） 2015（6） 2014（5） 2013（4） 2016（4） 2021（4） 2012（3） 2010（2） 2023（2）
申请年 2012（7）  2014（6）  2009（5）  2013（4）  2015（4）  2020（4）  2011（3）  2022（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） MAX PLANCK G.（2）
NANOTEK INST.（2） SHANGHAI INS.（2） UNIV SINGAPO.（2） UNIVERSAL MA.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Producing graphene/metal nanowire hybrid material composition for electrode of lithium battery by preparing a catalyst metal-coated mixture mass and exposing catalyst metal-coated mixture mass to high temperature environment.

JANG B Z

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M