国家/地区 美国（6） 世界知识产权组织（4） 韩国（3） 中国（2） 台湾（2）
IPC部 B（8）
IPC大类 B01（8）
IPC小类 B01J（8） H01J（8） C01B（7）
B82Y（4） C23C（4） H01L（2）
H05H（2）
IPC H01J037/32（8）
发明人 ANZELMO B H（2） STOWELL M W（2）
公开年 2021（2）
申请年 2013（2）  2020（2） 
专利权人 LYTEN INC（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D

Reactor system useful for producing carbon agglomerates, comprises microwave energy source configured to generate microwave energy, field-enhancing waveguide, expansion chamber in fluid communication with constricted region and configured to expand plasma, and outlet.

TANNER D, COOK D, ANZELMO B H, KALLURI R, STOWELL M W

Treating particles for repairing defects in fullerene or graphene containing nanoparticles involves disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing particles.

BUCKLAND J, WALTERS D

Device useful in graphene manufacturing device to coat particle surface with graphene using underwater plasma discharge, comprises e.g. chamber having solution and particles dispersed in solution, discharge electrode and power supply unit.

PARK H J, KANGIL K, HONG Y C

Graphene producing device has cathode and anode which are configured to create arc discharge producing flux stream, and to deposit material from flux stream on substrate.

KEIDAR M, SHASHURIN A

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A