国家/地区 中国（8）
IPC部 H（8） C（2）
IPC大类 H01（8） C07（2）
IPC小类 H01L（8） C07C（2） C07D（2）
IPC H01L051/05（8）
发明人 CHANG X（2） GUO X（2） JIA C（2）
LI P（2） WANG B（2） YU X（2）
公开年 2022（8）
申请年 2021（4）  2022（4） 
专利权人 UNIV NANKAI（3） BEIJING WEIM.（2）

Multilayer composite contact electrode for use in organic photoelectric device i.e. organic diode electric memory, has base layer coated with buffer layer, where buffer layer is coated with inorganic layer, and organic layer or organic inorganic composite layer.

TANG D, WANG B, JI L, WANG H

Transistor has substrate layer formed with concave part, concave part has bottom surface, where lower surface of semiconductor channel region and bottom surface of concave part have a preset distance, or part of semiconductor channel region and bottom surface of concave part are contact.

ZHANG Z, CAO Y, LIN Y

Synaptic transistor with long-term synaptic plasticity, has substrate which is semiconductor layer, whose two ends are provided with electrodes, where electrode is source and drain electrode and semiconductor layer is indium zinc oxide nanowire array and Nafion-graphene quantum dot blending layer.

NI Y, LIU L, XU W

Preparation of vertical organic transistor used in e.g. organic electroluminescent flexible display and integrated circuit, involves using mask plate to accurately align with silicon dioxide/heavily doped silicon surface with graphite, and using evaporator to deposit source metal through mask plate.

WU J, YU Z, CHEN Z, XU Y, YANG T, YU X, JU F, SUN H

New diamine compound with quantum interference effect, used in preparation of single-molecule field effect transistor.

CHANG X, WANG B, JIA C, LI P, GUO X

Light-controlled graphene-modulated, heterogeneity transistor for manufacturing infrared sensor, comprises gate electrode, insulating layer, graphene nano-band array, source electrode, drain electrode and organic semiconductor layer.

YU X, LIU Z, YAO Z, LI J

New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.

CHANG X, JIA C, ZHANG M, LI P, GUO X

Preparation of resistance change memory in semiconductor field, involves adding cadmium sulfate and oxalic acid into N, N-dimethyl formamide, adding polymer polyvinyl alcohol, polymethyl methacrylate and polystyrene, and spin coating.

ZHENG W