国家/地区 美国（9） 世界知识产权组织（7） 中国（5） 日本（5） 韩国（5） 欧洲专利局（EPO）（4） 法国（2）
IPC部 B（11）
IPC大类 C01（11）
IPC小类 C01B（11） C30B（11） B82Y（9）
C23C（5） H01L（4） B32B（3）
IPC C01B031/02（9） B82Y040/00（8） C01B031/04（7）
B82Y030/00（6） C30B029/02（4） C23C016/26（3）
C01B032/184（2） C01B032/188（2） C23C016/02（2）
C30B023/02（2） C30B029/36（2） C30B029/64（2）
发明人 OUERGHI A（2）
公开年 2012（5） 2011（3） 2013（3）
申请年 2011（11）
专利权人 CENT NAT REC.（2）

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K

Forming single-layer graphene film by replacing portion of air in a reactor having a substrate with a buffer gas, flowing the buffer gas through the reactor and then heating the reactor, and passing the buffer gas through liquid precursors.

RADHAKRISHNAN G, ADAMS P M

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Vapor phase epitaxy carbon fiber assembly used as electrode material of lithium cell, is aggregate of vapor growth carbon fiber having tubular graphene layer structure, and average fiber outer diameter in preset range.

HITOE Y, SUZUKI J, SATO H, KAWASHIMA S, SUZUKI A

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K