国家/地区 美国（11） 世界知识产权组织（11） 日本（8） 中国（7） 欧洲专利局（EPO）（7） 韩国（6） 加拿大（2）
IPC部 B（14）
IPC大类 C01（14）
IPC小类 C01B（14） B82Y（11） H01L（6）
H01G（5） B32B（4） C07C（3）
C25B（3） H01B（3） H01M（3）
B05D（2） B82B（2） C07D（2）
C09D（2） C23C（2）
IPC C01B032/184（14）
发明人 ABDELKADER A M（2） DRYFE R A W（2） JEFF R A W（2）
KINLOCH I A（2）
公开年 2014（6） 2013（4） 2015（3）
申请年 2013（14）
专利权人 UNIV MANCHES.（2）

Preparing graphene material, comprises adding graphene oxide into dispersion medium to obtain suspension of oxidized graphene, spray drying the suspension to obtain graphene granules; and reducing graphene particles by atmosphere reduction.

WANG Y, HONG M

Preparing anthracite based graphene oxide comprises e.g. preparing ultra-clean anthracite powder, adding dispersant, carrying out ultrasonication to prepare dispersion liquid, and preparing graphene oxide colloid solution.

ZHANG L, ZHANG M

Patterning of graphene oxide film used in production of electronic component, involves depositing graphene oxide film on substrate, reducing portion of film, and producing pattern of reduced graphene oxide area in graphene oxide film.

BORINI S, WEI D, WHITE R, BESSONOV A A

Producing in electrochemical cell of one or more of graphene, graphite nanoplatelet structures, and graphane, involves passing current through cell to intercalate ions into graphitic negative electrode.

DRYFE R A W, KINLOCH I A, ABDELKADER A M, JEFF R A W, DRYFE R A V

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, heating upper surface of silicon carbide layer using gas, and forming graphene layer on surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Graphene for electronic equipment e.g. display device, battery, photoelectric device and solar cell, contains nitrogen-containing organic compound.

NA D H, PARK E S, RYU J C, WON D K, CHEOL R J, NA D, WON D, PARK E, RYU J, YUAN D, YOO J H, LIM Y M, HUH Y

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Apparatus used for manufacture of ultrathin graphene sample, comprises graphite electrode, counter electrode, electrolyte, container for retaining electrolyte, power supply connected to two electrodes by wires and porous filter.

TANG JIE, CHEN QIAN, SHINYA NORIO, QIN LUCHANG, TANG J, CHENG Q, SHINYA N, QIN L

Making graphene laminate used in e.g. LCD, comprises forming graphene on graphitization catalyst film, coating surface of substrate with binder layer composition, contacting composition and graphene, curing composition, and removing film.

SHIN H, CHOI J, HAN G, LEE Y