国家/地区 美国（9） 韩国（6） 世界知识产权组织（4）
IPC部 B（9）
IPC大类 B32（9）
IPC小类 B32B（9）
IPC B82Y030/00（6） B82Y040/00（5） C01B031/02（5）
C23C016/26（5） B32B009/00（4） B32B009/04（3）
B32B018/00（3） B32B037/02（3） C01B031/04（3）
H01B001/04（3） B32B043/00（2） B82B003/00（2）
C01B032/182（2） H05B033/28（2）
发明人 CHOI J（9）
公开年 2012（5） 2013（3）
申请年 2012（9）
专利权人 SAMSUNG ELEC.（6） CHOI J（3） UNIV SUNGKYU.（3） HONG B H（2）
KANG J（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Graphene sheet useful in a transparent electrode, a solar cell, a conductive thin film, a display device, a hydrogen storage medium and an electrical device, comprises intercalation compound comprising organic compound, and graphene layers.

CHOI J

Heterogeneous laminate used e.g. in thermoelectric element of thermoelectric module which is used in thermoelectric apparatus, comprises graphene and thermoelectric inorganic compound (e.g. cobalt-antimony compound) disposed on graphene.

CHOI J, BAIK S, HONG S, KIM W, KIM E, LEE Y, BAIK S H, CHOI J Y, HONG S H, KIM E S, KIM W Y, LEE Y H, BAEK S, LI Y

Passive element layer of e.g. display element used in e.g. electric equipment, has main layer that is provided with electromagnetic wave attenuation and heat radiation function at near-field region, and is equipped with graphene layer.

KIM S W, HONG B H, CHOI J, KANG J, HWANG S H, BUNG C J, HUI H B, HWI H S, MO G J, U KIM S, HEE H B

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B

Method for transferring graphene sheet to device involves forming binder layer on graphene sheet on which carbonization catalyst is formed, exfoliating carbonization catalyst and transferring graphene sheet to device.

SHIN H J, CHOI J, YOON S