国家/地区 美国（10） 韩国（6） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 香港（2） 日本（2）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10） H01L（10） B82Y（7）
C01B（6） B01J（2）
IPC H01L021/02（10）
发明人 AHN J（2） AHN J R（2）
公开年 2014（6） 2013（4）
申请年 2013（10）
专利权人 SAMSUNG ELEC.（3） AHN J（2） UNIV SUNGKYU.（2）

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Forming method for graphene barriers for interconnects, involves heating dielectric body, first layer and second layer, so to convert of amorphous carbon to graphene.

NIYOGI S, LANG C

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Graphene semiconductor, useful in electrical device e.g. FET, single electron transistor and LED, comprises graphene and a metal atomic layer comprising a metal i.e. sodium disposed on graphene which transfers charge with the graphene.

AHN J, SEO J, PARK J, JEON C, AHN J R, JEON C H, PARK J H, SEO J T

Depositing graphene onto a substrate used in polymeric composites, involves transferring solubilized graphene onto the substrate in a liquid medium, where transferring occurs by changing the solubility of graphene in the liquid medium.

PAWLOSKI A R, BENNETT G S, CERNOHOUS J J, KASKE K, SZYMANSKI A E

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, by subjecting sample to ex situ functionalization step, and subjecting sample having hydroxide terminated surface to in situ treatment.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A