国家/地区 美国（18）
IPC部 C（18）
IPC大类 C01（16） B82（9） H01（9）
C23（6） B01（5） B32（3）
B05（2） C09（2）
IPC小类 C01B（16） B82Y（7） C23C（6）
H01B（6） B82B（5） H01L（5）
B01J（4） B32B（3） B05D（2）
C09K（2）
IPC C01B031/02（12） C01B031/04（11） B82B003/00（5）
B82Y030/00（5） B82Y040/00（5） C23C016/26（5）
H01B001/04（4） B01J019/12（3） B05D005/12（2）
B32B009/00（2） C01B032/184（2） C01B032/194（2）
C09K011/65（2） C23C016/06（2） C23C016/44（2）
发明人 JEON S（4） KIM S O（4） CHO B J（3）
JEON S W（3） KIM H（3） KIM H J（3）
OH I（3） HONG S（2） HONG S H（2）
HWANG J（2） LEE D H（2） LEE J（2）
LIM J（2） MUN J H（2） OH I K（2）
公开年 2015（4） 2011（3） 2014（3） 2017（3） 2012（2） 2013（2）
申请年 2012（4）  2013（3）  2014（3）  2010（2）  2011（2）  2016（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（18）

Single-phase composition for preparing graphene-based compound, comprises hydroxyl group-containing carbon source, saccharide-based compound includes monosaccharide, single-phase composition comprises hydrocarbyl alcohol-based solvent.

PARK O O, LEE S H, IM S H, PARK O, HYUK I

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Porous nanostructure used for e.g. hydrogen storage material and vibration absorber, comprises graphene layer comprising laminated graphene and having pores formed on surface or inside, and metal particles embedded in graphene filler.

JUNG J, KIM H, OH I, OH J, JUNG J H, KIM H J, OH J H

Graphene-nanomaterial complex includes nanomaterials which are disposed between graphenes that are not disposed on same plane to form three-dimensional graphene structure, in which graphenes, nanomaterials or both form electrical network.

HONG S H, JUN G H, OH J Y, RYU H J, GWANG H J, HO J R, JAE Y O, SOON H H

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Graphene hydrogel for preparing graphene hydrogel nanocomposite material and article e.g. energy storage device, comprises pores between laminated graphene sheets.

KIM S O, MAITI U N, LIM J W, LIM J, NARAYAN M U

Fabrication of graphene quantum dots used in e.g. electronic product, involves heating mixture of graphite powders with metallic hydrate salt to form intercalation compound by inserting metal ions, and redispersing in solvent.

JEON S, KIM B, SONG S, JEON S W, KIM B H, SONG S H

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H