国家/地区 韩国（31）
IPC部 B（31）
IPC大类 B32（31）
IPC小类 B32B（31） C23C（29） C01B（25）
H01L（15） B82Y（14） B05D（10）
H01B（9） C23F（5） C30B（4）
A41D（2） B01D（2） B01J（2）
B22F（2） B65H（2） B82B（2）
IPC B32B009/00（31）
发明人 CHOI J（5） CHOI J Y（5） SHIN H（4）
SHIN H J（4） AHN J（3） HONG B H（3）
BAE S（2） CHOI K（2） HEIGHT M（2）
KIM D（2） KIM H（2） KIM H K（2）
KIM S O（2） LEE D H（2） LEE J K（2）
公开年 2011（7） 2012（4） 2013（3） 2016（3） 2021（3） 2009（2） 2010（2） 2015（2） 2017（2）
申请年 2010（7）  2011（4）  2016（4）  2013（3）  2015（3）  2008（2）  2009（2）  2020（2） 
专利权人 SAMSUNG ELEC.（7） GRAPHENE SQU.（3） KOREA INST S.（3） UNIV SUNGKYU.（3）
AHN J（2） HEIQ MATERIA.（2） KOREA ADV IN.（2） KOREA ADVANC.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Method for transmitting a transmission layer from a substrate, such as graphene layer, to a carrier substrate, such as glass substrate and ceramic substrate, involves transmitting a graphene layer from substrate to carrier substrate.

MOKKAPATI V R, POVAZAY B, UHRMANN T, ULLMANN T, MOKKAPATI V R S S, SARMA M V R, THOMAS A

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

High-heat radiation thin film for use as heat radiation material for e.g. electronic device, comprises carbon layer arranged on metallic board, where thickness of metallic board is specific value and carbon layer is made up of graphene.

MIN E H, CHO S H, CHOI B K, HONG M E, HO C S, KEUN C B, CHO S

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Transfer method of graphene for laminating material and designing shape of object, involves adhering graphene to one side portion of imprint receptive seat, and passing imprint receptive seat and metal sheet through etchant to graphene.

KIM Y K, YONG K K, KIM Y

Producing metal-graphene thermally conductive film, comprises forming a graphene film, and forming a composite film.

ZHANG X

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K