国家/地区 中国（21）
IPC部 C（21）
IPC大类 C01（21） C23（6） B82（3）
H01（3）
IPC小类 C01B（21）
IPC C01B032/186（21）
发明人 WANG W（21）
公开年 2022（7） 2018（4） 2016（3） 2017（3） 2021（3）
申请年 2016（6）  2021（5）  2022（4）  2017（2）  2018（2） 
专利权人 CHANGZHOU SI.（3） CHONGQING GR.（3） NINGBO INST .（3） UNIV CHINA R.（3）
WUXI GRAPHEN.（3） JIANGSU JIAN.（2） WANG W（2）

Device for producing roll-to-roll graphene film on substrate, has high temperature process chamber which is rotatably connected with at least two pairs of conveying rollers, and provided with driving device for driving two substrates to attach with each other.

JU Y, YI J, WANG D, LU W, WANG W

Segmented roll-to-roll chemical vapor deposition graphene continuous growth device, has exhaust pipe whose end is provided with vacuum pump, and unwinding cabin and reeling cabin whose ends are wound on unreeling drum and winding drum.

PAN D, QU Y, TAN H, WANG W, SHEN D

Preparing graphene film, comprises moving growth substrate in reaction chamber at predetermined speed under action of conveying mechanism along with supporting structure until reaction chamber is conveyed out.

GUO B, QU Y, TAN H, SHEN D, WANG W

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Composite structure of graphene film comprises metal substrate layer along longitudinal direction, graphene layer, isolation layer comprising borneol block and paraffin, and supporting layer which is polymer.

JU Y, WANG W, WANG D

Preparation device for graphene film transfer isolation layer comprises heating part, sublimation part and condensing part from bottom to top, where sublimation unit comprises bottom end sealed and containing frame of upper end opening.

JU Y, WANG C, WANG W, WANG D

Preparation of hexagonal boron nitride surface torsion double-graphite alkene involves introducing reaction gas and catalytic gas into chemical vapor growth chamber at second preset temperature.

WANG W, XIAO X, JIANG C, WANG H

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Preparing low square resistance, ultra-clean graphene transparent electrode, comprises depositing graphene on a metal substrate by chemical vapor deposition, processing the substrate with graphene, etching, and cleaning.

WANG Z, ZHANG Z, WANG W, LIU Z

Graphene material production processing device comprises main body, where inner surface of main body is fixedly connected with heat insulating layer, and inner surface of heat insulating layer and close to left and right sides are provided with chute.

HUANG H, XU H, WANG W