国家/地区 美国（8）
IPC部 C（8）
IPC大类 C23（8） C01（6） C30（3）
H01（3）
IPC小类 C23C（8） C01B（6） C30B（3）
H01L（2）
IPC C23C014/06（8）
发明人
公开年 2017（5） 2016（3）
申请年 2016（8）
专利权人

Method of manufacturing coating layer structure applied to machine element, involves locating continuous graphene structure layer between metal substrate and coating layer to act as buffer structure between substrate and coating layer.

HUANG Y, HU C, HU Q, HUANG Y C, HU C L

Formation of graphene film on substrate e.g. glass, involves depositing graphene on surface of substrate to form graphene crystal layer, depositing graphene oxide layer on layer, and depositing graphene on resulting composite layer.

BI H, HUANG F, LIU X, SONG Z, TANG Y, XIU T

Manufacture of graphene for fabrication of electronic device, involves adsorbing molecule having six-membered ring structure onto surface of substrate, and irradiating surface using beam of molecules containing carbon atoms.

MATSUMOTO T

Synthesis of Q-carbon, graphene and diamond used as e.g. nanodots, involves depositing amorphous carbon on substrate, melting amorphous carbon into undercooled state and quenching melted amorphous carbon from undercooled state.

NARAYAN J

Depositing graphene-based layer on substrate by chemical vapor deposition using hydrocarbon, comprises forming plasma within vacuum chamber using magnetron containing target made of catalytically active metal, and sputtering.

WALD K, FAHLAND M, GUNTHER S, SCHILLER N, GUENTHER S

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z