国家/地区 中国（9） 美国（4）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C23C016/26（11）
发明人 LI X（11）
公开年 2022（5） 2018（2） 2020（2）
申请年 2022（4） 
专利权人 CHINESE ACAD.（4） CHONGQING GR.（4） INT BUSINESS.（2）

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Growth forging split device for graphene metal composite material, comprises growth chamber, forging chamber and transfer mechanism for transferring metal material, where growth chamber and forging chamber are inside with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, SHI H, LI X, YU J

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Graphene film preparation device useful for heating in pipe, comprises heating element, which is embedded in the quartz tube and forming heating cavity with quartz tube, the heating cavity is placed by substrate, and air supply assembly forming graphene film on the substrate.

QING F, LI X, HE Q

Quartz bracket for use in quartz heating device of graphene production system, has two rolling rings which supports and transports copper foil on which graphite is to be grown, and supports and rolling rings are made of quartz material.

LI X, ZHANG B, LI J, WANG X, YU G

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A