国家/地区 韩国（32）
IPC部 B（32）
IPC大类 B32（32）
IPC小类 B32B（32）
IPC C23C016/26（32）
发明人 HONG B H（5） CHOI J（4） AHN J（3）
CHOI J Y（3） SHIN H（3） SHIN H J（3）
WOO Y S（3） YOON S（3） YOON S M（3）
AHN J H（2） CHOI K（2） HEIGHT M（2）
KIM H（2） KIM K S（2） LEE J K（2）
公开年 2012（8） 2013（6） 2011（4） 2009（3） 2016（3） 2021（3） 2010（2）
申请年 2011（8）  2012（7）  2008（3）  2009（3）  2013（3）  2015（2）  2016（2）  2020（2） 
专利权人 GRAPHENE SQU.（4） SAMSUNG ELEC.（4） UNIV SUNGKYU.（3） HEIQ MATERIA.（2）
HONG B H（2） KOREA INST S.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T