国家/地区 美国（15） 日本（13） 世界知识产权组织（13） 中国（6） 韩国（6） 欧洲专利局（EPO）（5） 加拿大（2） 德国（2）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C23C016/26（22）
发明人 MATSUMOTO T（4） IFUKU R（3） SUGIURA M（3）
WADA M（3） CHOI J（2） HUNLEY D P（2）
KABUKI N（2） MARTENS R I（2） MASAHITO S（2）
RYOTA I（2） STRACHAN D R（2） TAKASHI M（2）
UEDA H（2）
公开年 2013（8） 2022（4） 2015（3） 2012（2）
申请年 2012（8）  2013（2）  2014（2）  2015（2）  2020（2）  2021（2）  2022（2） 
专利权人 TOKYO ELECTR.（5） SAMSUNG ELEC.（2） TE CONNECTIV.（2） TYCO ELECTRO.（2）
UNIV KENTUCK.（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Manufacturing metal-carbon composite useful for high thermal conductivity heat dissipation material, comprises synthesizing carbon material on porous catalyst surface, complexing metal and controlling porosity of metal-carbon composite.

LEE S H, HAJUNSEOK, RHO H K, RYU H S

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Apparatus for plasma synthesis of graphitic products including graphene, passes cracked carbon-containing species into reaction chamber, and recombining cracked carbon-containing species within afterglow.

PENNINGTON D A, CLAYTON A R, JUDA K L, PAUKNER C, KURZEPA L, COOPER R H S J, KOZIOL K K, JOAUG J Y, ST JOHN COOPER R H, ST JOHN C R H

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Thermally managed electronic component such as graphene-based heat sinks and thermal conduits, has thermal management coating that comprises layer of aligned carbon nanoparticles which is mounted on graphene coating layer.

LI A W, HUNT J H, HOWE W R