国家/地区 美国（12）
IPC部 B（12）
IPC大类 B82（12）
IPC小类 C23C（12）
IPC C23C016/26（12）
发明人 LEE D H（2） LEE Y（2） LIU Z（2）
公开年 2011（3） 2012（2） 2013（2） 2015（2）
申请年 2011（3）  2010（2）  2012（2）  2014（2） 
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2）

Method of forming a metal-graphene composite, by combining graphene-coated metal components to form precursor workpiece, and working precursor workpiece into bulk form.

KAPPAGANTULA K S, KRAFT F F

Manufacture of core-shell structured nanowire e.g. copper nanowire used for transparent electrode for e.g. solar cell, involves providing metal nanowire and coating metal nanowire with graphene by plasma chemical vapor deposition.

LEE Y G, JEONG Y J, AHN Y M, LEE D H

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Activated expanded graphite oxide, useful in a monolayer graphene sheet and an electrode of an ultracapacitor, comprises a dopant comprising a non-metal e.g. nitrogen.

RUOFF R S, ZHANG L L, STOLLER M D

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U