国家/地区 欧洲专利局（EPO）（46）
IPC部 C（46）
IPC大类 C23（46）
IPC小类 C23C（46） C01B（39） H01L（34）
B82Y（17） B32B（14） H01M（11）
H01B（10） B05D（7） B01J（5）
C30B（5） B82B（4） C23F（3）
C25D（3） H01G（3） H01J（3）
IPC C23C016/26（46）
发明人 LEE E（4） LI Y（4） SHIN H（4）
SHIN H J（4） BYUN K（3） BYUN K E（3）
OZYILMAZ B（3） SHEN X（3） SHIN K（3）
SHIN K W（3） CHOE P（2） CHOI B（2）
CHOI B L（2） CHOI J（2） HONG B（2）
公开年 2015（7） 2021（6） 2012（5） 2013（4） 2016（4） 2017（4） 2022（4） 2011（3） 2018（3） 2020（2）
申请年 2017（6）  2013（5）  2021（5）  2012（4）  2015（4）  2016（4）  2011（3）  2014（3）  2019（3）  2020（3）  2010（2） 
专利权人 SAMSUNG ELEC.（6） COMMISSARIAT.（3） UNIV SINGAPO.（3） BASF SE（2）
COMMISSARIAT.（2） CORNING INC（2） GRAPHENE SQU.（2） MAX PLANCK G.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Cathode active material e.g. for lithium secondary battery, comprises e.g. silicon-containing coating layer formed inside pores or on surfaces of carbon-based particles, and carbon coating layer formed on silicon-containing coating layer.

PARK G O, YOO S K, JANGDONGIL, CHUNG J H, JANG D I, ZHENG Z, ZHANG D, YU S, PARK G

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y

Removing polymethylmethacrylate (PMMA) from graphene surface by subjecting PMMA layer to deep UV light irradiation, treating irradiated PMMA layer to remove PMMA layer and drying cleaned layer located on substrate in stream of nitrogen gas.

ALEXEEVA N, KASALYNAS I

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Preparing neodymium-graphene composite material used as electrode material in electrolytic water hydrogen production device or as cathode material in fuel cell or metal-air battery, comprises preparing neodymium simple substance on graphene.

SA G, CHEN L, LIANG T, DENG Y, SAGAR R U R

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Semiconductor device for solar cells and light-emitting devices, has charge transportation layer that is doped with conductive material of electrode, which includes chemical vapor deposition grown graphene or carbon nanotubes.

FERRARI A C, KAKAVELAKIS G, DIMOS K, ORIADA C, OCCHIPINTI L, GEORGE K, CONSTANTINOS D, DACOLM O