国家/地区 韩国（10） 美国（9） 中国（6） 台湾（5） 世界知识产权组织（5） 欧洲专利局（EPO）（2） 日本（2）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C23C（15） C01B（14） H01L（6）
H01B（4） C30B（3） B32B（2）
C04B（2） H01G（2）
IPC C23C016/32（15）
发明人
公开年 2021（3） 2011（2） 2013（2） 2022（2）
申请年 2021（5）  2010（2）  2011（2） 
专利权人 GRAPHENE SQU.（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Manufacturing method of electrode for hydrogen production, involves increasing activity of tungsten carbide nanoflake to hydrogen evolution reaction by removing oxide layer or graphene layer from surface of tungsten carbide nanoflake.

LEE W S, KO Y, BAIK Y J, PARK J, LEE K S, KIM I, JEONG D S, KO Y J, PARK J K

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacture of graphene sheet involves growing thin film containing metal catalyst on substrate containing carbon source by providing reaction gas, reacting graphene sheet and heating supporter on graphene growth.

HUI H B, SU K G