国家/地区 欧洲专利局（EPO）（33）
IPC部 C（33）
IPC大类 C01（33）
IPC小类 C01B（33）
IPC C30B029/02（33）
发明人 VEERASAMY V（3） VEERASAMY V S（3） CHIBA Y（2）
CHIBA YOSHIHIRO（2） KIM J（2） MANCEVSKI V（2）
VLADIMIR M（2）
公开年 2011（6） 2015（6） 2016（4） 2021（4） 2014（3） 2010（2） 2013（2） 2017（2） 2018（2）
申请年 2013（6）  2009（4）  2014（4）  2015（4）  2020（4）  2011（2）  2012（2）  2016（2）  2017（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） JX NIPPON MI.（2）
MAX PLANCK G.（2） NIPPON MININ.（2） UNIVERSAL MA.（2）

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Production of functionalized graphene for lithium-ion batteries involves milling crystalline graphite in the presence of electrolyte solution to produce thinned intermediate material, combining with other electrolyte solution, and milling.

BOZALINA M, PERRET P, NAZARPOUR S, NAZARPOUR S S N