国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（6）
发明人 FU Y（7）
公开年 2013（3） 2012（2）
申请年 2013（3）  2012（2） 
专利权人 UNIV PEKING（7）

Preparation of graphene film involves placing high purity soluble salt into corundum boat, putting into CVD tubular furnace, vacuuming, filling inert gas, cleaning cavity, and introducing hydrogen, argon or nitrogen gas.

PENG P, WANG Z, TIAN Z, SONG J, LI M, REN L, FU Y

Preparation of wrinkle-free graphene involves selecting high-purity copper as substrate, using hydrochloric acid or nitric acid solution to remove surface impurities and placing cleaned copper in chemical vapor deposition furnace.

FU Y, GONG X, PENG P, REN L, WANG Z, GU Y, TIAN Z

Preparing graphene nanopores comprises growing graphene by chemical vapor deposition, preparing graphene layer on metallic copper thin film, etching back surface of graphene coated metallic copper thin film and etching with acid solution.

FU Y, GUO J, HUANG R, LI C, REN L, ZHAO H, WEI Z, ZHANG X, HU B, ZHOU M

Transferring graphene thin film involves using diluted acid solution to the metal substrate to react to generate hydrogen gas bubbles to separate the graphene layer and the metal substrate.

FU Y, HUANG R, LI C, REN L, ZHAO H, WEI Z, ZHANG X, HU B, ZHOU M

Preparation of carbon nanotube composite material for batteries and capacitor involves performing chemical vapor deposition to obtain single-layered graphene or multi-layered graphene carbon material, and transferring graphene to substrate.

HUANG R, ZHANG L, FU Y, LI C, ZHAO H, WEI Z, ZHANG X, GUO J, REN L, HU B, ZHOU M

Preparing graphene nanometer belt for making integrated circuit, involves preparing graphene on substrate, using metal nano-particles, etching along graphene preferred direction in annealing process, in boundary domain function of graphene.

FU Y, HUANG R, WEI Z, ZHANG X, YE T, ZHOU M

Preparation of atom scale graphene groove, e.g. for nano-electronics field, by suspending graphene on high temperature resistant substrate, depositing metal atoms on surface, etching in argon/hydrogen atmosphere, cooling, and vacuum-drying.

FU Y, HUANG R, LI C, WEI Z, ZHANG X, YE T