国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B032/186（6） C01B032/194（2） C01B032/196（2）
发明人 SUN L（10）
公开年 2018（3） 2019（3）
申请年 2017（3）  2018（3）  2019（2） 
专利权人 UNIV PEKING（10）

Divided-area type graphene preparation device has carrier whose upper part is provided with finite field baffle, slit and carrier that are extended to receiving cavity by discharging cavity, and carrier whose lower part is provided with heater.

LI Q, MA Z, ZHU A, SUN L, CHEN H, LIU Z

Growth method of multilayer graphene used for electrons, photoelectrons and catalysis by forming graphene core on substrate by vapor deposition, and changing growth condition, continuously growing, and forming multilayer graphene.

LIU Z, PENG H, SUN L, ZHONG S, LI Y, WANG Y, YU Y, CHEN B

Preparing large-area multilayer graphene comprises providing substrate in reaction chamber, annealing, introducing carbon source, performing chemical vapor deposition reaction and adding water vapor during chemical vapor deposition reaction.

LIU Z, CHEN B, SUN L, LI Y, DING Q, ZHAO Z, LIANG Y, WANG Y, LIU H

Cleaning method of graphene comprises rolling the surface of graphene through curved body provided with adsorbent on curved surface.

LIU Z, PENG H, SUN L, LI Y, LIU X, LIN L, ZHANG J, JIA K

Cleaning graphene surface for preparing clean graphene used in e.g. transparent electrode, involves providing carbon nanomaterial, contacting nanomaterial with graphene surface, applying pressure and separating nanomaterial from graphene.

LIU Z, PENG H, LI Y, SUN L, WANG K, ZHANG J, JIA K, LIU X

Graphene film transfer apparatus for transferring graphene film to target substrate, has peristaltic component for controlling flow rate of liquid in chamber, where graphene film is transferred to target substrate along with level shift.

LIU Z, PENG H, LIU X, ZHANG J, SUN L, JIA K

Vacuum graphene transfer device useful for transferring the graphene film to the target substrate comprises e.g. shell set inside of vacuum cavity, lifting mechanism set in the shell and comprising pressing plate capable of lifting.

LIU Z, PENG H, LI Y, SUN L, ZHANG J, JIA K, LIU X

Preparation of ultra-clean graphene involves using chemical vapor deposition, and providing foam copper above growth substrate.

LIU Z, PENG H, LIN L, ZHANG J, SUN L

Preparing ultra-clean graphene used in optical and electric field, involves adding copper substrate in tubular furnace, introducing carbon source gas and hydrogen for chemical vapor deposition and introducing carbon dioxide.

LIU Z, PENG H, ZHANG J, GU K, LIN L, SUN L

Preparation of ultraclean graphene comprises considering gas path from upstream to downstream direction, placing copper acetate and copper substrates at intervals and introducing hydrogen for chemical vapor deposition.

LIU Z, PENG H, GU K, ZHANG J, LIN L, SUN L