国家/地区 中国（17）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17）
IPC C23C016/26（17）
发明人 HE L（2） ZHANG D（2） ZHANG L（2）
公开年 2020（3） 2022（3） 2012（2） 2017（2） 2018（2）
申请年 2020（3）  2021（3）  2012（2）  2017（2） 
专利权人 UNIV SHANGHA.（2）

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N

Graphene-doped silicon carbide core-shell composite polyimide permeable membrane for water treatment, is film made of graphene-doped silicon carbide core-shell structure and polyimide resin gel, where structure is made by etching heavily doped silicon carbide layer in electrochemical etching.

HE L, XU Y, LI P, YIN Z

Preparing copper/graphene/copper composite material useful in national power system and integrated circuit, comprises e.g. cleaning copper foil, using direct current power supply to polish surface of copper foil, reacting and depositing.

WU L

Graphene/metal composite conductor useful as conductor material of transmission line, comprises metal conductor having two sides arranged oppositely, and two side graphene layers.

LIU Y, GUO C, YAO S, FAN T

Flexible complex film comprises nano porous gold film layer, polypyrrole layer, nano gold particle embedded in polypyrrole layer and graphene layer, prepared e.g. by preparing nano porous gold film by removing alloying free corrosion method.

HOU Y, ZHANG H, YANG Y, ZHANG J, GUO J

Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.

HAO Y, NIU W

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

High strength and conductivity composite material useful for fields of electric power, electronics and machinery industry comprises copper matrix and graphene.

ZHANG X, XIONG D, CAO M, ZHANG L, CHEN C, ZHANG D

High photoluminescence performance graphene-porous silicon material comprises graphene which is covered on porous silicon to form composite structure.

GE D, ZHANG L, QIAN D, CHENG G, DING J