国家/地区 韩国（15） 美国（15） 日本（11） 中国（10） 世界知识产权组织（8） 欧洲专利局（EPO）（3） 印度（3） 巴西（2） 墨西哥（2） 俄罗斯（2） 台湾（2）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC C01B031/02（19） C23C016/26（15） C01B031/04（14）
B82Y030/00（9） B82Y040/00（9） B32B009/00（6）
C23C016/44（5） B05D001/36（3） H01B001/04（3）
H01L021/205（3） B05D001/18（2） B05D003/02（2）
B32B015/04（2） B32B019/00（2） B32B027/00（2）
发明人 HONG B H（3） AHN J（2） BAE S（2）
BAE S K（2） CHOI J（2） CHOI J Y（2）
CHUNG H（2） CHUNG H J（2） HEO J（2）
HEO J S（2） HUH J（2） HUH J S（2）
JUNG H（2） JUNG H J（2） KANG S（2）
公开年 2011（24）
申请年 2010（24）
专利权人 UNIV SUNGKYU.（6） SAMSUNG ELEC.（5） UNIV SUNGKYU.（4） GRAPHENE SQU.（2）
SAMSUNG TECH.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Graphene laminate, useful e.g. in transparent electrode, super-capacitor, fuel cell and solar cell, comprises substrate, binder layer on substrate, and graphene on binder layer, where the graphene is bound to substrate by binder layer.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J