国家/地区 美国（8）
IPC部 B（8）
IPC大类 B01（8） C01（8） B82（5）
H01（5） C23（2）
IPC小类 B01J（8）
IPC B01J019/08（8）
发明人
公开年 2013（8）
申请年 2012（3）  2013（3）  2011（2） 
专利权人

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Fabricating graphene comprises inserting first electrode that is graphite multilayer material and second electrode into electrolyte without contacting, producing potential difference and permitting liquid to enter into first electrode layer.

LING Y, WANG C, LIU J, LING Y C, WANG C P, LIU J Y

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Producing exfoliated graphite or graphene from non-intercalated and non-oxidized graphitic material comprises dispersing graphitic material in liquid intercalating agent and subjecting suspension to microwave or radio frequency irradiation.

ZHAMU A, JANG B Z

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Preparing graphene which is used for construction of devices e.g. integrated circuits, comprises bombarding a surface of a silicon carbide substrate with ions (of e.g. gold), and annealing a volume of the substrate at the bombarded surface.

GILA B P, APPLETON B R, LEMAITRE M G, TONGAY S

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S