国家/地区 中国（19） 欧洲专利局（EPO）（4） 法国（2） 世界知识产权组织（2）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C01B032/188（22）
发明人 LIU X（9） WEI X（7） WEI Z（7）
LI Y（4） WANG Y（3） FOURNEL F（2）
FUGIER P（2） GOLANSKI L（2） LI Z（2）
RODRIGUEZ G（2） ZHANG Y（2） ZHAO Z（2）
公开年 2018（15） 2017（7）
申请年 2017（22）
专利权人 CHENGDU GELA.（7） 55TH RES INS.（2） COMMISSARIAT.（2）

Substrate used to produce graphene film, comprises stack of self-supporting base, electrically insulating layer and catalyst layer with self-supporting base having basic monocrystalline area, in succession and superimposed on each other.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Producing graphene film used in e.g. biological sensors involves forming graphene film by epitaxial deposition in contact with platinum-containing monocrystalline zone of substrate catalyst layer using chemical vapor deposition device.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Controllable step-shape pre-treatment of silicon carbide substrate useful in pyroletic preparation of graphene, comprises placing the cleaned silicon carbide substrate on a susceptor in a chemical vapor deposition CVD apparatus, and heating.

ZHAO Z, LI Y, WANG Y, LI Z

Preparing diamond micropowder surface in-situ growing graphene layer, involves adding deionized water and hydrofluoric acid solution per gram of diamond, where diamond of is placed in a plastic container, and added deionized water.

HUANG H, LIU Y, HU J, WANG Y, WU Y, SHI H, LI Y, WEN B

Method for increasing uniformity of epitaxial wafer of silicon carbide-pyrolytic graphene, by placing silicon carbide substrate on susceptor, pyrolyzing, filling reaction chamber with protective gas and taking out epitaxial wafer.

ZHAO Z, LI Y, WANG Y, LI Z

Preparation of silicon carbide pyrolytic graphene, involves cleaning silicon carbide substrate, placing in annealing frame, and growing graphene on surface of substrate by silicon carbide high temperature thermal decomposition method.

YUAN Z, LIU X

Device used for preparing graphene comprises reaction device pipe, copper tube induction coil, high-frequency induction heating device, multiple nickel-chromium-iron alloy pallets, multiple metal porous plates and fan-shaped nozzles.

LIU X, WEI X, WEI Z

Device useful for preparing graphene by silicon carbide epitaxial growth, has reaction device, where tubular reactor is connected in series through pipeline, and tubular reaction device comprises copper tube and induction coil.

LIU X, WEI X, WEI Z

Device useful for preparing graphene by silicon carbide epitaxial growth, has air inlet device, reaction device and tail gas processing device, where air inlet device comprises air inlet pipe, gas flow controller and control valve.

LIU X, WEI X, WEI Z

Improved silicon carbide extrapolation device for preparing graphene, comprises copper tube which is set on reaction device, induction coil is set on copper tube, high-frequency induction heating apparatus is set with induction coil.

XINGCHONG L, WEI X, ZEZHONG W, LIU X, WEI Z