国家/地区 美国（7） 日本（6） 中国（5） 韩国（5） 世界知识产权组织（5） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 C（17）
IPC大类 C01（17） C23（17） C30（7）
H01（5） B82（4）
IPC小类 C01B（17）
IPC C23C014/14（17）
发明人 KIM J（2）
公开年 2017（3） 2011（2） 2013（2） 2014（2） 2021（2） 2022（2）
申请年 2012（3）  2013（3）  2016（3）  2020（2）  2021（2） 
专利权人

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

METHOD FOR OBTAINING COMPOSITE COATINGS BASED ON GRAPHENE OXIDE.

IONI YU V, SUSLIN S G

Multi-layer graphene laminate used in electronic devices, comprises catalyst metal layer and stacked structure comprising graphene layer grown on one surface of catalyst metal layer.

YOON S G, IREH H

Manufacturing method of orderly arrangement and carbon deposition composite coating of graphene carbon nanotubes on metal substrate, involves depositing particles on substrate as catalyst of carbon to form carbon structural layer.

CHIEN S P

Surface-metalized fiber, yarn or fabric used in product e.g. blanket comprises fiber, fiber yarn or fiber fabric having surface, graphene layer having multiple graphene sheets and optional conducive filler bonded to surface, and metal layer.

LIN Y, LEE S, JHONG Y, ZHAMU A, JANG B Z

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Graphene composite for transparent electrode of flexible electronic device, has graphene layer surface-treated with amine compound, and metal layer provided on graphene layer.

KIM D, HYEON T, PARK M, SON D, SONG J

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S