国家/地区 韩国（15） 美国（14） 中国（10） 日本（10） 世界知识产权组织（9） 欧洲专利局（EPO）（4） 西班牙（3） 印度（2） 台湾（2）
IPC部 C（26）
IPC大类 C01（26） C23（26） H01（13）
B82（11） B05（5） B32（5）
C30（5） B01（3） C03（3）
IPC小类 C01B（26）
IPC C23C016/26（26）
发明人 SEO D（3） CHUNG H（2） CHUNG H J（2）
HEO J（2） HEO J S（2） HONG B H（2）
HUH J（2） HUH J S（2） JUNG H（2）
JUNG H J（2） JUNG M H（2） KANG S（2）
KANG S R（2） SEO S（2） SEO S A（2）
公开年 2011（26）
申请年 2010（15）  2011（8）  2009（3） 
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（4） SAMSUNG TECH.（2） UNIV SUNGKYU.（2）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Method for preparing single-layer and multi-layer graphene from chemical gas phase deposition, involves pouring carbon gas to vacuum cavity and maintaining flow rate of hydrogen gas, and obtaining metal substrate deposited with graphene.

QU Y

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U