国家/地区 美国（7）
IPC部 C（7）
IPC大类 C01（7） C30（7） B32（3）
B82（3） H01（3）
IPC小类 C01B（7）
IPC C30B001/10（7）
发明人
公开年 2014（2）
申请年 2014（2） 
专利权人

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Method for manufacturing single-crystal graphene sheet, involves heat treating catalyst layer and carbonaceous material in one of inert atmosphere and reducing atmosphere to form single-crystal graphene sheet.

CHOI J, SHIN H, YOON S, HAN J

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Graphene sheet for manufacturing electronic device, e.g. electrode or transistor, and display, e.g. organic light emitting diode (OLED), comprises regularly or irregularly patterned and thickness modulated structure on graphene surface.

KAYA I I, YANIK C, *YANIK CENK, *KAYA ISMET INONU

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C