国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C23C016/26（9） C01B031/04（6） C01B032/186（5）
C01B032/194（3） C22C001/10（3） C23C016/56（3）
B32B037/06（2） B32B037/10（2） C22C009/00（2）
C23C016/02（2） C23C016/448（2）
发明人 SHI H（12）
公开年 2022（5） 2013（3） 2016（2）
申请年 2022（5）  2016（3）  2013（2） 
专利权人 CHINESE ACAD.（10） CHONGQING GR.（5） CHONGQING IN.（3） CHONGQING MO.（3）

Scale production device of high conductive graphene metal composite material, has sealing chamber that is provided with feeding area and high temperature area provided with heating mechanism, pressing mechanism and transport mechanism.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Growth forging split device for graphene metal composite material, comprises growth chamber, forging chamber and transfer mechanism for transferring metal material, where growth chamber and forging chamber are inside with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, SHI H, LI X, YU J

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Imaging production of one-dimensional carbon nanotube and three-dimensional graphene composite material by patterning growth substrate, soaking in hydrofluoric acid solution, ultrasonically processing and magnetic control sputtering.

YU Y, HU Y, SUN T, YANG J, WEI D, SHI H, DU C

Preparing uniform graphene thin film by introducing metal substrate into chemical vapor deposition reaction chamber, heating chamber, annealing metal substrate and carrying out graphene nucleation on metal substrate surface.

GAO X, JIANG H, LI Z, SHI H, YANG G

Preparing substrate of multiple graphene films involve subjecting metal substrate to high temperature annealing, cooling metal substrate to room temperature, coating layer of carbon solution on metal substrate, and solidifying solution.

GAO X, JIANG H, LI Z, SHI H

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y