国家/地区 中国（9） 世界知识产权组织（4） 欧洲专利局（EPO）（2） 美国（2）
IPC部 C（12）
IPC大类 C30（12） C23（4） H01（3）
C01（2）
IPC小类 C30B（12）
IPC C30B025/18（12）
发明人 CHEN Z（2） SUI Y（2） SUN L（2）
XU X（2） YU G（2） ZHANG H（2）
ZHANG Y（2）
公开年 2015（6） 2016（3） 2017（3）
申请年 2015（12）
专利权人 SHANGHAI INS.（2） UNIV PEKING（2）

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparing graphene mercury cadmium telluride composite film material comprises preparing graphene composite film, then transferring graphene composite film in three stages.

LI B

Production of graphene used in e.g. semiconductor surfaces by depositing carbon on substrate, involves providing substrate of wafer having crystalline layer of germanium with crystallographic orientation in reactor, and evoking gas flow.

PASTERNAK I, STRUPINSKI W

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

A method of diamond nucleation comprises,providing substrate and forming graphene layer on surface of the substrate.

TZENG Y, CHANG C, TZENG Y H

Preparation method for single crystal graphene structure, has annealing copper foil at constant temperature, and reducing temperature of copper foil to room temperature.

LIN L, LIU Z, PENG H, SUN L

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X