国家/地区 中国（28） 美国（12） 世界知识产权组织（8） 韩国（6） 欧洲专利局（EPO）（3） 日本（3） 台湾（2）
IPC部 C（39）
IPC大类 C30（39） C01（18） C23（17）
B82（11） H01（8） B05（2）
B32（2）
IPC小类 C30B（39）
IPC C30B029/02（22） C23C016/26（12） C01B031/04（11）
C01B031/02（10） B82Y040/00（8） C30B025/18（8）
C30B025/02（7） B82Y030/00（6） C30B029/64（4）
C30B033/02（4） C23C016/02（3） C30B001/02（3）
C30B029/38（3） B82Y099/00（2） C01B032/186（2）
发明人 ZHANG Y（11） GUO H（10） ZHANG K（10）
LEI T（8） DENG P（7） DING G（4）
TANG X（4） XIE X（4） WANG H（3）
ZHAO Y（3） BI H（2） CHEN X（2）
DI Z（2） HUANG F（2） HWANG S W（2）
公开年 2012（39）
申请年 2012（22）  2011（11）  2010（6） 
专利权人 UNIV XIDIAN（11） CHINESE ACAD.（3） CHINESE ACAD.（2） DING G（2）
PENG P（2） SAMSUNG LED .（2） SHANGHAI INS.（2） WANG H（2）
XIE X（2）

Growing a one or two monolayer film of graphene on a substrate, comprises depositing a first layer of graphene on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate.

KELBER J

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Forming single-layer graphene film by replacing portion of air in a reactor having a substrate with a buffer gas, flowing the buffer gas through the reactor and then heating the reactor, and passing the buffer gas through liquid precursors.

RADHAKRISHNAN G, ADAMS P M

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Manufacture of nickel film-containing graphene nano ribbon involves forming carbon-silicon carbide epitaxial film on carbonized layer formed on silicon substrate, depositing nickel film, annealing and removing nickel film.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon used in manufacture of microelectronic device, involves preparing masking plate by isolation strip and ion-implantation strip, and controlling width of strips, and injecting carbon ions to substrate.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon by growing carbide layer on silicon substrate chip, growing cubic silicon carbide heteroepitaxial film, injecting carbon ions, pyrolyzing to generate carbon film, placing on copper film, and annealing.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y