国家/地区 中国（8） 世界知识产权组织（3） 美国（2）
IPC部 C（13）
IPC大类 C30（13） C01（6） C23（4）
H01（4） B01（2）
IPC小类 C30B（13）
IPC C30B029/02（13）
发明人 ZHANG Z（2）
公开年 2023（13）
申请年 2022（8）  2021（4） 
专利权人 GEN GRAPHENE.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Manufacturing two-dimensional materials, such as graphene, involves passing purge gases into gas confining space of reaction chamber, to purge gas confining space of oxygen, passing donor gas, moving carriers to pass donor gas to space, setting positive pressure in space, heating forming layers.

ERICKSON G E, SHERRILL J V

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S