国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7）
IPC小类 C30B（7）
IPC C30B029/02（7）
发明人
公开年 2019（7）
申请年 2019（6） 
专利权人

Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.

SUN Z, HU A

Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in reaction furnace, heating, introducing hydrogen, annealing, introducing carbon source, adjusting annealing temperature and cooling.

HUANG F, CHENG Y, BI H

Preparation of single crystal graphene for semiconductor material, involves annealing copper- and nickel-deposited substrate to obtain alloy substrate sample, oxidizing substrate sample, performing chemical vapor deposition, and cooling.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.

LI X, SHEN C, QING F

Preparing single-layer single crystal graphene comprises e.g. pretreatment of copper foil, substrate annealing, growing, and cooling down.

WEN Y, HUANG R, HUANG Z, LAI F