国家/地区 美国（6） 韩国（3） 中国（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/26（7）
发明人
公开年 2015（7）
申请年 2014（4）  2013（2） 
专利权人

Graphene-copper nano wire composite film comprises substrate, copper nano wire layer implanted on substrate, and graphene layer on copper nano wire layer.

GAO L, LIU Y, SUN J, WANG R, SHI L

Flexible and stretchable graphene film for electronic application, has functional layer formed on graphene layer and provided with insulating polymer and conductive material, where metal layer is deposited on functional layer.

CHEN Y, LAI Y

Graphene oxide doped material for electrode of pixel structure in display device, has hetero material part formed with graphite layer and hetero layer, where graphite layer is formed with mixing layer and hetero layer.

BAI F, LIU J, YANG J

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Activated expanded graphite oxide, useful in a monolayer graphene sheet and an electrode of an ultracapacitor, comprises a dopant comprising a non-metal e.g. nitrogen.

RUOFF R S, ZHANG L L, STOLLER M D

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S