国家/地区 韩国（10） 美国（5） 中国（3） 日本（2）
IPC部 C（11）
IPC大类 C01（11） B01（4） H01（4）
C23（2）
IPC小类 C01B（11）
IPC C01B031/04（10） C01B031/02（2） C01B032/15（2）
C01B032/182（2） H01L051/00（2） H01M004/36（2）
H01M004/38（2）
发明人 KIM H（11）
公开年 2016（11）
申请年 2015（5）  2014（4）  2016（2） 
专利权人 KOREA INST E.（3） SAMSUNG ELEC.（2）

Manufacture of porous graphene filter used in filter apparatus, involves providing filters having pores formed by substituting portion of carbon atom by atom produced from source containing pyridine, within filter mainframe.

KWON G, KIM H

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Producing graphene involves preparing impregnating expanded graphite in boron or nitrogen having expanded graphite to form graphite layer.

HAN J H, KIM H, KIM K K, CHUNG C Y

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Manufacture of three-dimensional graphene used for manufacturing of reduced graphene, involves providing core-shell composite in which core is surrounded by graphene or graphene derivative as shell material, and etching.

GON S J, LEE S S, JANG Y L, KIM H, JONG H P, BAE W K

Improvement of electrical energy storage capability of graphene material used in fiber complex, involves heat-treating graphene or material containing graphene at preset temperature in presence of acid and reforming surface of graphene.

PARK S, SHIN M K, KIM H, CHO Y, CHO K

Manufacture of secondary battery cathode material involves preparing silicon colloidal solution using waste silicon sludge suspension, preparing mixture of silicon agglomerates, graphene oxide and dispersion medium, and heat-treating.

JANG H D, CHANG H, KIM H, ZHANG X, JIN H

Graphene structure has graphene layer which is provided on substrate, and is included with several convex portions of hollow structure.

KU J, KO W, KIM H, KU J Y, KO W H, KIM H W

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Preparing reduced graphene oxide for use in electrochemical device, involves mixing graphene oxide with metal oxide to obtain mixture, and milling obtained mixture in ball mill, and then removing metal oxide from milled mixture.

KIM H, HO B P, SOHN M, YOO B M