国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B032/186（6） C23C016/26（6） C01B031/04（3）
C23C016/56（3） B82Y030/00（2） C01B031/02（2）
C01B032/194（2） C23C014/18（2） C23C016/02（2）
C23C028/00（2） H01G011/36（2） H01G011/68（2）
H01G011/86（2） H01M004/04（2） H01M004/133（2）
发明人 WANG W（10）
公开年 2022（3） 2014（2） 2015（2）
申请年 2022（3）  2013（2）  2014（2） 
专利权人 CHANGZHOU SI.（3） WANG W（3） GUO S（2） JIANGSU JIAN.（2）
OZKAN C S（2） OZKAN M（2） UNIV CALIFOR.（2） WUXI GEFEI E.（2）
WUXI GRAPHEN.（2）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Segmented roll-to-roll chemical vapor deposition graphene continuous growth device, has exhaust pipe whose end is provided with vacuum pump, and unwinding cabin and reeling cabin whose ends are wound on unreeling drum and winding drum.

PAN D, QU Y, TAN H, WANG W, SHEN D

Preparing graphene film, comprises moving growth substrate in reaction chamber at predetermined speed under action of conveying mechanism along with supporting structure until reaction chamber is conveyed out.

GUO B, QU Y, TAN H, SHEN D, WANG W

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Graphene growth substrate composite etching liquid comprises surfactant, defoamer and cosolvent.

WANG W

Transfer method of graphene film involves depositing graphene thin film on metal substrate by chemical vapor deposition method, bonding transfer substrate using heat-peelable adhesive, and etching metal substrate.

YANG J, LI H, TAN H, WANG W, QIU Y