国家/地区 中国（27）
IPC部 C（27）
IPC大类 C30（27）
IPC小类 C30B（27）
IPC C30B029/64（27）
发明人 LIU Z（4） SUN L（4） LIN L（3）
PENG H（3） XU X（3） CHEN X（2）
CHEN Z（2） GUO F（2） LI Y（2）
LIU H（2） LIU K（2） MANCEVSKI V（2）
VLADIMIR M（2） WANG E（2） WU M（2）
公开年 2017（6） 2021（5） 2022（4） 2012（3） 2015（2） 2018（2）
申请年 2017（5）  2020（4）  2021（4）  2011（3）  2016（3）  2014（2）  2022（2） 
专利权人 UNIV PEKING（7） SHANGHAI INS.（2） UNIV SHANDON.（2） UNIVERSAL MA.（2）

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Controlling grain boundary angle of two-dimensional material, involves providing substrate with specific crystal orientation and growing two-dimensional material by chemical vapor deposition on substrate.

LIN L, SUN L, LIU H, LI Y, LIU Z

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Structural design of two-dimensional adjustable ferroelectric polarization material based on iron intercalated graphene oxide by simulating construction of iron intercalated graphene oxide crystal structure, performing structure optimization, applying strain and randomly distributing iron ions.

DONG Z, ZHANG S, ZHONG C, GENG C

Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises polishing and cleaning the copper foil, introducing methane, heating and naturally cooling.

ZHAO X, LI Y, WANG P, SUN L, GUO X, ZHANG X, YU F

Preparing ditelluride nanosheet comprises mixing and reacting metal ditelluride crystals, alkali metal salt and aprotic solvent to obtain intermediate inserted with alkali metal ions, and exfoliating with alkali metal ions in protic solvent.

WU C, PENG J, GUO Y, XIE Y

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M