国家/地区 欧洲专利局（EPO）（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（6） B82Y030/00（5） B82Y040/00（5）
C23C016/26（5） C01B031/02（3） H01L021/02（3）
H01L029/16（3） C01B032/184（2） C23C016/02（2）
C23C016/56（2） C23C028/00（2） C30B025/18（2）
C30B029/02（2）
发明人
公开年 2013（7）
申请年 2013（4）  2011（2） 
专利权人 CENT NAT REC.（2） CNRS CENT NA.（2）

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A