国家/地区 美国（62）
IPC部 C（62）
IPC大类 C01（62）
IPC小类 C01B（62） H01L（62） B82Y（31）
H01B（19） B32B（11） B82B（10）
C23C（10） C07C（8） B05D（7）
C08G（7） B01J（6） G01N（6）
C09D（5） H01M（5） H05B（5）
IPC H01L051/00（62）
发明人 LEE J（5） KIM H（4） MUELLEN K（4）
CHOI J（3） CHOI J Y（3） FENG X（3）
KIM S（3） LEE J H（3） LEE Y（3）
MULLEN K（3） SCHWAB M G（3） SHIN H（3）
SHIN H J（3） AHN J（2） AHN J H（2）
公开年 2013（10） 2014（10） 2015（10） 2016（10） 2012（7） 2011（6） 2017（4） 2021（2）
申请年 2015（11）  2012（10）  2013（10）  2014（9）  2011（7）  2016（6）  2010（4）  2009（2） 
专利权人 SAMSUNG ELEC.（6） BASF SE（4） MAX PLANCK G.（4） BASF CHINA C.（3）
KOREA INST S.（3） TOSHIBA KK（3） UNIV SEOUL N.（3） UNIV SUNGKYU.（3）
EMPIRE TECHN.（2） FUJITSU LTD（2） INT BUSINESS.（2） LG ELECTRONI.（2）
POSTECH ACAD.（2） SNU R DB FO.（2） UNIV NORTHWE.（2） UNIV SEOUL N.（2）
UNIV SUNGKYU.（2）

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Hybrid structure formed by laminating second graphene coated with polymer on upper surface of the first graphene coated with carbon nanotubes useful for producing perovskite solar cell.

WOO C Y, CHO Y, HONG S G, KIM S, LEE H, LEE H W, HONG S K, JO Y S, KIM S M, KIM Y, OH S H, LI L

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Semiconductor device, has resin material that is provided for covering semiconductor chip which is coupled onto substrate through bump electrode and that is provided for containing resin and graphene particles.

MATSUBARA Y, YOSHIHISA M

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Preparing inkjet printed graphene ink composition comprises exfoliating graphene with medium, contacting exfoliated graphene medium with aqueous medium to concentrate e.g. graphene and contacting precursor composition with hydrophobic fluid.

HERSAM M C, LIANG Y T, SECOR E B, PRABHUMIRASHI P L, PUNTAMBEKAR K P, GEIER M L, AHN B Y, LEWIS J A

Perovskite-based solar cell used for optoelectronic device, consists of graphene layer as conductive transparent electrode.

CHOI M S, SUNG H, AHN N, LEE J, JANG M S, SOO C M, KWON L J, SEOK J M, YOON J, CUI W, JANG M

Converting carbon nanotubes into graphene sheets used in detecting and sensing system comprises providing hydrogen plasma at specified temperature and etching latent defects in carbon nanotubes with the plasma and splitting carbon nanotubes.

EGERTON E J, SOOD A K

Preparation of reduced and N-doped graphene oxide used in a transistor, comprises preparing mixed solution containing graphene oxide and tetramethylammonium hydroxide, and heating the mixed solution.

KHAN F, BAEK S, KIM J H, BAEK S H