国家/地区 美国（7）
IPC部 C（7）
IPC大类 C30（7） B82（4） C01（4）
C23（3） H01（3）
IPC小类 C30B（7）
IPC B82Y030/00（4） B82Y040/00（4） C30B029/02（4）
C01B032/184（3） C30B025/18（3） H01L029/16（3）
C30B001/02（2） C30B025/02（2） H01L021/02（2）
发明人
公开年 2018（7）
申请年 2017（5） 
专利权人

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Microfluidic device for X-ray scattering or diffraction, comprises a top layer comprising top support layer and top layer(s) of graphene, a bottom layer comprising bottom support layer and bottom layer(s) of graphene, and a middle layer.

SUI S, WANG Y, DIMITRAKOPOULOS C, PERRY S L

Composition of matter used as hydrogen storage material, comprises transition metal doped magnesium nanocrystal encapsulated with reduced graphene oxide.

URBAN J J, RUMINSKI A M, CHO E S, BARDHAN R, BRAND A, WOOD B C, HEO T W, SHEA P T, KANG S Y, ZHOU X

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P