国家/地区 中国（33）
IPC部 C（33）
IPC大类 C23（33）
IPC小类 C23C（33） H01L（21） C01B（9）
H01M（8） C30B（7） B32B（5）
H01B（4） B01J（2） B82Y（2）
C25D（2） H01J（2） H05K（2）
IPC C23C014/06（33）
发明人 CHEN Z（3） HAO Y（3） WANG D（3）
ZHANG J（3） HUANG J（2） LI X（2）
LV J（2） NING J（2） WANG W（2）
WU C（2） WU H（2） YANG H（2）
ZHANG X（2） ZHANG Y（2）
公开年 2022（10） 2021（6） 2016（3） 2015（2） 2018（2） 2019（2） 2020（2）
申请年 2022（6）  2019（5）  2021（5）  2020（4）  2016（3）  2013（2）  2014（2） 
专利权人 UNIV XIDIAN（4）

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Bipolar plate for fuel cell, has titanium substrate whose surface is provided with gold layer that is covered on graphene part of barrier layer, where graphene layer is connected with graphene diffusion part to diffuse gold layer.

LIAO R, XIANG L, YI J, WANG D, WANG W

Electric arc preparation of graphene-coated silicon material useful in material of lithium-ion battery comprises pressing graphite powder into cathode, mixing graphite powder and silicon-based material, applying voltage between cathode and anode to generate arc discharge.

JIANG Z, LIU J, FEI P, CUI W

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Composite current collector for negative electrode of lithium ion battery, has base material layer located at center, where material of transition layer is mixture of metal layer material and non-metal layer material.

LAN S, HU P, JIANG T, LI X, YANG F, BI F

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Light emitting diode transparent electrode useful for mobile phone, comprises first layer electrode and second layer electrode set on epitaxial layer, epitaxial layer includes P/N electrode finger and P/N bonding pad, and first layer electrode includes chromium layer and transparent material layer.

HU J, ZHANG X, LUO G

Low temperature sputtered graphene transparent electrode thin film used in solar cell comprises soda-lime glass substrate plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer, and p-n junction thin film.

MA J

Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.

LIANG Z, WANG Q, WANG X

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S