国家/地区 中国（38）
IPC部 C（38）
IPC大类 C23（38）
IPC小类 C23C（38） H01L（26） C01B（18）
B82Y（9） C30B（8） H01B（7）
B01J（5） B32B（5） C25D（3）
H01J（3） H01M（3） C01G（2）
C09K（2） C22F（2） H01G（2）
IPC C23C016/02（38）
发明人 SHIN H（5） SHIN H J（5） SHEN X（4）
BYUN K（3） BYUN K E（3） LEE C（3）
LEE C S（3） LI C（3） LI J（3）
LI Y（3） WANG Q（3） CHEN Y（2）
CHO Y（2） CHO Y C（2） FENG J（2）
公开年 2021（10） 2022（6） 2015（3） 2016（3） 2017（3） 2020（3） 2023（3） 2012（2） 2013（2）
申请年 2020（8）  2022（7）  2016（6）  2021（5）  2013（3）  2014（3）  2019（2） 
专利权人 SAMSUNG ELEC.（5） HARBIN INST .（2） LAM RES CORP（2） UNIV XIDIAN（2）
ZING SEMICON.（2）

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Producing insulating high thermal conductivity graphene film comprises placing activated base film in vapour deposition chamber, taking diborane and disilane as precursor material and ammonia and nitrogen as carrier and introducing argon gas for deposition, carbonizing and graphitizing, and rolling.

ZHOU Z, ZHU Q, ZHENG Z

Preparing gallium nitride film used for blue light emitting diode, comprises e. g. drying pre-processed substrate with high-purity nitrogen, adding into vacuum reaction chamber, heating, stabilizing first preset time, and using remote ammonia plasma to process second preset time.

YAN T, YE Z, REN W, WANG R, ZHANG Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing graphene field emission source useful in field emission cathode of electronic device e.g. display device, comprises slowly cooling carbon atom dissolved to metal material to form graphene layer by stage cooling, closing power supply to room temperature, and taking out metal material.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B