国家/地区 中国（23）
IPC部 C（23）
IPC大类 C23（23）
IPC小类 C23C（23） H01L（18） C30B（8）
B82Y（4） C01B（4） H01B（2）
IPC C23C016/34（23）
发明人 CHEN Z（3） ZHANG J（3） HAO Y（2）
LI Z（2） LV J（2） WANG D（2）
YANG H（2） ZHANG Y（2）
公开年 2021（5） 2017（4） 2022（4） 2023（3） 2016（2）
申请年 2022（5）  2016（4）  2020（4）  2011（2）  2017（2）  2021（2） 
专利权人 UNIV XIDIAN（2）

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Producing insulating high thermal conductivity graphene film comprises placing activated base film in vapour deposition chamber, taking diborane and disilane as precursor material and ammonia and nitrogen as carrier and introducing argon gas for deposition, carbonizing and graphitizing, and rolling.

ZHOU Z, ZHU Q, ZHENG Z

LED display device useful in organic LED display device, has electrode pin provided with an LED light-emitting device, surface of the third heat dissipation layer provided with a fourth heat dissipation layer and first heat dissipation layer includes aluminum powder and graphene.

ZHANG Y, DENG W

Preparing gallium nitride film used for blue light emitting diode, comprises e. g. drying pre-processed substrate with high-purity nitrogen, adding into vacuum reaction chamber, heating, stabilizing first preset time, and using remote ammonia plasma to process second preset time.

YAN T, YE Z, REN W, WANG R, ZHANG Y

Electron-emitting element e.g. cold cathode-type electron source, has coating membrane that is film which transmits electron, and second electrode that is protective film of different material, and comprises electron emission surface.

MURAKAMI K, NAGAO M, KATSUHISA M, MASAYOSHI N

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N