国家/地区 中国（20）
IPC部 C（20）
IPC大类 C23（20）
IPC小类 C23C（20） C01B（9） H01L（9）
B82Y（5） H01B（5） H01M（4）
H01G（3） C03C（2） C30B（2）
H05B（2）
IPC C01B031/04（9） C23C016/26（9） C23C016/44（6）
H01B013/00（5） B82Y030/00（3） B82Y040/00（3）
C01B032/186（3） C23C016/04（3） H01B005/14（3）
H01G009/042（3） C01B031/02（2） C23C016/455（2）
C23C016/52（2） C23C020/06（2） H01B001/04（2）
发明人 WANG Y（3） ZHANG L（3） CHEN M（2）
FAN T（2） LI J（2） LIN J（2）
LIU Y（2） MIN Y（2） SONG J（2）
TONG S（2） ZHANG X（2）
公开年 2014（20）
申请年 2014（10）  2013（8）  2012（2） 
专利权人 NANJING XINY.（2） SHENZHEN CHI.（2） YANCHENG ZEN.（2）

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

High heating carbon crystal plate, has hard plastic plate whose surface is coated with graphene, temperature resistant insulation layer coated with silicon carbide, where plate is made of polyamide, phenolic aldehyde resin and epoxy resin.

CHEN Z, WU C

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Preparation of graphene conductive thin film for preparing graphene/silicon multilayer composite anode material involves formulating graphene solution and depositing on metal electrode surface using electron beam vapor deposition machine.

LIN J, WANG W, CHEN M, HOU Z

Depositing high dielectric thin film graphene on sample specimen involves providing high dielectric medium to grow graphene on desired sample.

SHEN Y, WEI H, YANG S, ZHOU P

Depositing graphene material on high-k gate dielectric used in preparation of transistor, involves substrate sample, where substrate is coated with graphite material.

FU Y, GUO J, HUANG R, REN L, ZHANG L, WEI Z, YE Q, ZHANG X, GU Y, JIA Y

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K