国家/地区 美国（18）
IPC部 C（18）
IPC大类 C01（18） H01（18） B82（7）
C23（5） C08（4） B32（3）
C09（3） B01（2） H05（2）
IPC小类 C01B（18）
IPC C01B031/04（11） C01B031/02（6） H01B001/04（6）
B82Y030/00（5） B82Y040/00（5） C08K003/04（3）
C23C016/26（3） H01L029/786（3） H01L051/00（3）
B32B009/00（2） B82B001/00（2） B82B003/00（2）
C01B031/00（2） C01B032/184（2） C01B032/194（2）
发明人 LEE S H（4） KIM J K（3） LEE J K（3）
LEE S（3） SONG Y（3） SONG Y W（3）
HONG J（2） HONG J M（2） KIM H（2）
KIM H S（2） KIM J（2） KIM J H（2）
LEE J（2） LIM J A（2） NA S I（2）
公开年 2012（3） 2015（3） 2010（2） 2014（2） 2019（2） 2022（2）
申请年 2014（4）  2011（3）  2009（2）  2012（2）  2021（2） 
专利权人 KOREA INST SCI TECHNOLOGY（18）

Membrane reactor used in hydrogen fuel cell system for processing ammonia, includes reaction region, permeate region, reinforcement insert and composite membrane, where reaction region comprises bed filled with catalyst for dehydrogenation reaction, containing ruthenium on metal-doped support.

NAM S W, HAN J, KIM Y C, JANG S C, JEONG H, SOHN H, YOON C W, JO Y S

NaCl-rGO composite for a positive electrode active material of a sodium secondary battery (all claimed), such as mobile phones, camcorders, research and development efforts on electrochemical devices, comprises rGO refers to reduced graphene oxide, and sodium chloride nanoparticles are located rGO.

CHANG W Y, JUNG H, KIM E S, IQRA M, ROH H K, CHUNG K Y, ZHANG Y, ZHENG X, KIM E, ROH H, ZHENG J, NOH H K, JUNG H G, CHANG W

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Artificial solid electrolyte interphase of anode used for secondary battery i.e. lithium metal secondary battery, comprises multi-walled carbon nanotube thin film or reduced graphene oxide thin film to protect anode material.

CHO W I, KIM M S, LEE S H, DO VAN D, NAH I W, OH I H, CHOWONIL, KIMMUNSEK, KIM M, DOVANDUNG

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating, involves forming DNA lamina molecular having base structure of array in order to absorb on second area of graphene layer.

KIM C, KIM Y J, JUNG Y M, JUN S C, LEE T, LEE S, BYUN Y T, WOO D H, KIM S H, SEO M A, KIM J H, YI J C

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M