国家/地区 日本（18） 美国（17） 韩国（15） 世界知识产权组织（11） 中国（10） 欧洲专利局（EPO）（7） 台湾（3） 德国（2） 香港（2）
IPC部 B（23）
IPC大类 B32（23）
IPC小类 B32B（23）
IPC C01B031/02（23）
发明人 BAIK S H（2） HONG S H（2） KIM W（2）
KIM W Y（2） LEE S（2） LEE S H（2）
RYU C J（2） SHIMADA N（2）
公开年 2014（12） 2013（6） 2015（5）
申请年 2013（23）
专利权人 UNIV SUNGKYU.（3） OIKE KOGYO K.（2） SAMSUNG ELEC.（2） SAMSUNG ELEC.（2）

Transfer film used for manufacturing transparent conductive laminate, consists of silicon thin film as mold release layer, thin metal film and transparent conductive film including graphene, sequentially formed on base film.

SHIMADA N

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Fluoropolymer composition for forming composite layer used for articles, comprises liquid continuous phase, and composite particles dispersed in liquid continuous phase and containing fluorosilane-treated graphene-comprising particles.

ZHANG Q, QI Y, DOOLEY B, HU N

Transferring a graphene layer from a metal substrate to a second substrate by providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate, and treating the metal substrate.

HUYGHEBAERT C, VEREECKEN P M, POURTOIS G

Graphene dispersed composition used for manufacturing carbon containing resin laminated material, comprises graphene oxide, hardening agent, epoxy resin and silane coupling agent having epoxy group as dispersing agent.

SHIMADA N

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, heating upper surface of silicon carbide layer using gas, and forming graphene layer on surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Carbon material used for forming structure, comprises nanocarbon, graphene, or graphite, and has structure in which nanocarbon, graphene, or graphite are integrated through covalent bond between carbon-carbon, or van der Waals binding.

HIURA H, TSUKAGOSHI K

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Composite laminated structure useful for producing thermoelectric material for thermoelectric element of thermoelectric module for e.g. waste heat development and thermal nuclear development, comprises graphene and thermal mineral.

BAIK S H, HONG S H, KIM W Y, LEE S H, RYU C J

Composite laminate for thermoelectric laminate used in thermoelectric device, comprises graphene and thermoelectric inorganic material containing single crystal having hexagonal crystal system.

RYU C, HONG S, KIM W, BAIK S, LEE S, CHOI J, BAIK S H, HONG S H, KIM W Y, LEE S H, RYU C J