国家/地区 中国（11） 美国（11） 韩国（7） 世界知识产权组织（4）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C23C（24）
IPC C23C016/26（16） C01B032/186（13） C23C016/02（7）
C01B032/194（6） H01L021/02（6） C01B032/184（5）
C23C016/01（4） C23C016/455（4） H01L021/285（4）
B82Y030/00（3） B82Y040/00（3） C01B032/15（3）
C23C014/58（3） C23C016/505（3） C23C016/56（3）
发明人 LEE C S（3） BYUN K（2） BYUN K E（2）
ELSAYED K A M（2） LEE C（2） MAAROUF A A（2）
NAVEH D Y（2） SHIN K（2） SHIN K W（2）
ZHANG L（2）
公开年 2023（24）
申请年 2022（24）
专利权人 SAMSUNG ELEC.（3） 2D GENERATIO.（2） UNIV BARILAN（2） UNIV IMAM AB.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Preparing large-area palladium sulfide or/and palladium disulfide nano-film useful in light detector, and catalyst, comprises e.g. evaporating palladium metal nano-films of different thicknesses to substrate by electron beam evaporation coating device, and passing argon gas into reaction chamber.

HE L, XIAO J, HAO Y, GAO H, HAO G

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N