国家/地区 美国（10） 中国（5） 日本（5） 韩国（5） 欧洲专利局（EPO）（3） 世界知识产权组织（3）
IPC部 B（11）
IPC大类 B82（11）
IPC小类 B82Y（11） C01B（11） B32B（4）
H01B（4） H01L（4） B82B（2）
C23C（2） C25D（2）
IPC B82Y099/00（11）
发明人 KIM J Y（2）
公开年 2012（5） 2011（4） 2013（2）
申请年 2011（11）
专利权人 SONY CORP（2）

Producing graphene nanomesh based charge sensor, by generating holes in graphene to create graphene nanomesh, passivating edge of each hole of mesh, functionalizing passivated edge of each of holes of nanomesh with chemical compound.

AFZALIARDAKANI A, HAN S, KASRY A, MAAROUF A, MARTYNA G J, NISTOR R, TSAI H

Preparing graphene sheets involves immersing, in a solution of electrolyte, two electrode portions including carbon material or metal, where electrolyte is e.g. acid, anionic surfactant; and causing potential to exist between electrodes.

LI L, SU C

Method of producing graphene cells in graphite with various intercalated additives.

KALANDARISHVILI A G

Preparing transition metal oxide or graphene composite comprises e.g. mixing transition metal salt, water and solution of graphite oxide dispersed in polyol solvent, and preparing the composite by applying microwaves to the mixed solution.

KIM K B, KIM H K, KIM J Y

Manufacture of via electrode involves forming via hole at substrate, forming catalyst layer at sidewall and bottom of via hole, and forming graphene layer in via hole by exposing the catalyst layer to solution mixed with graphene particles.

KIM D, BAEK K, PARK K, PARK J M, KIM Z S, KIM J Y, JEONG Y S, DO L, KIM D P, BAEK K H, DO LEE M

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Making transmission electron microscope grid comprises e.g. applying carbon nanotube film structure to a graphene layer to obtain a graphene layer-carbon nanotube film composite structure, and placing the composite structure on a grid.

LIN X, FENG C, ZHANG L, JIANG K, IM H Y, ZHANG L N

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Transparent electrode for optoelectronic applications e.g. organic photovoltaics and organic light emitting devices, comprises a grid structure, a graphene film associated with the grid structure, and a substrate.

TOUR J M, ZHU Y, TOUR J, SUN Z, YAN Z, RUAN G, PENG Z