国家/地区 美国（31）
IPC部 C（31）
IPC大类 C01（31）
IPC小类 C01B（31） C30B（31） C23C（18）
H01L（13） B82Y（11） B32B（7）
B01J（4） B05D（4） B82B（4）
C23F（3） C03C（2） C22C（2）
C25D（2） H01B（2） H01G（2）
IPC C30B025/18（31）
发明人 CHOI J（2） CHOI J Y（2） RUOFF R S（2）
TOH C T（2） YOON S（2）
公开年 2015（6） 2013（4） 2014（4） 2016（3） 2017（3） 2009（2） 2011（2） 2021（2） 2022（2）
申请年 2013（7）  2016（5）  2014（4）  2012（3）  2008（2）  2015（2）  2021（2） 
专利权人 UNIV SINGAPO.（2） UNIV SUNGKYU.（2） UNIV TEXAS S.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T