国家/地区 美国（39）
IPC部 B（39）
IPC大类 C01（39）
IPC小类 C01B（39） H01L（39） B82Y（31）
H01B（14） B32B（11） B82B（10）
B05D（7） C23C（7） B01J（6）
C07C（6） G01N（5） C08G（4）
C09D（4） C08K（3） C30B（3）
IPC H01L051/00（39）
发明人 CHOI J（3） CHOI J Y（3） KIM H（3）
BOL A A（2） CHOI S H（2） HAYASHI K（2）
HERSAM M C（2） KIM S（2） KIM W（2）
LEE Y（2） LEE Y H（2） MUELLEN K（2）
SCHWAB M G（2） SCHWAB M G S（2） SHIN H（2）
公开年 2013（9） 2014（7） 2011（5） 2012（5） 2015（3） 2016（3） 2017（3）
申请年 2012（8）  2013（8）  2011（7）  2015（4）  2010（3）  2014（3）  2016（3） 
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（3） BASF CHINA C.（2） BASF SE（2）
FUJITSU LTD（2） INT BUSINESS.（2） KOREA INST S.（2） MAX PLANCK G.（2）
UNIV NORTHWE.（2） UNIV SUNGKYU.（2）

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Preparing inkjet printed graphene ink composition comprises exfoliating graphene with medium, contacting exfoliated graphene medium with aqueous medium to concentrate e.g. graphene and contacting precursor composition with hydrophobic fluid.

HERSAM M C, LIANG Y T, SECOR E B, PRABHUMIRASHI P L, PUNTAMBEKAR K P, GEIER M L, AHN B Y, LEWIS J A

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method for forming nano-gaps in graphene used in e.g. electronic device, involves applying voltage across third region of single layer graphene such that nano-gap extending across the entire width of single layer graphene is formed.

BRIGGS G A D, MOL J A

Method for preparing graphene layer of e.g. electronic device, involves heating portion of graphene oxide layer by laser irradiation at specific laser output power, so that portion of graphene oxide is chemically reduced to graphene.

BALKENENDE A R, GIESBERS A J M, VAN DER TEMPEL L

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K